1999. 6. 24 1/2 semiconductor technical data KTD2061 epitaxial planar npn transistor revision no : 2 high voltage application tv, monitor vertical output application driver stage application coror tv class b sound output application features high breakdown voltage : v ceo =180v(min.) high transition frequency : f t =100mhz(typ.) high current : i c(max) =2a. complementary to ktb1369. maximum rating (ta=25 1 ) dim millimeters 1. base 2. collector 3. emitter to-220is 10.30 max 15.30 max 2.70 y 0.30 0.85 max x 3.20 y 0.20 3.00 y 0.30 a b c d e f g 12.30 max 0.75 max h 13.60 y 0.50 3.90 max 1.20 1.30 2.54 4.50 y 0.20 6.80 2.60 y 0.20 10 ? j k l m n o p q r f o q 1 2 3 l p n b g j m d n t t h e r t v s k l u t s 0.5 5 ^ 25 ^ 2.60 y 0.15 v u d a c electrical characteristics (ta=25 1 ) note : h fe classification o:70 140 , y:120 240 characteristic symbol rating unit collector-base voltage v cbo 200 v collector-emitter voltage v ceo 180 v emitter-base voltage v ebo 5 v collector current i c 2 a base current i b 0.2 a collector power dissipation (tc=25 1 ) p c 20 w junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =200v, i e =0 - - 1.0 a emitter cut-off current i ebo v eb =5v, i c =0 - - 1.0 a collector-emitter breakdown voltage v (br)ceo i c =10ma, i b =0 180 - - v dc current gain h fe v ce =10v, i c =400ma 70 - 240 collector-emitter saturation voltage v ce(sat) i c =500ma, i b =50ma - - 1.0 v base-emitter voltage v be v ce =5v, i c =500ma - - 1.0 v transition frequency f t v ce =10v, i c =400ma - 100 - mhz
1999. 6. 24 2/2 KTD2061 revision no : 2 collecotr current i (a) c collector-emitter voltage v (v) ce ce c i - v collector power dissipation p (w) 0 c 0 case temperature ta ( c) pc - ta 10 dc current gain h fe 0.3 0.1 0.03 0.01 collector current i (a) c h - i v ,v - i c collector current i (a) be(sat) saturation voltage v ,v (v) collector current i (a) 5 collector-emitter voltage v (v) 10 30 100 ce c 0.1 safe operating area fe c 1310 30 50 100 300 500 1k v =10v ce ce(sat) be(sat) c ce(sat) 50 300 0.3 0.5 1 3 5 10 nonrepetitive pulse tc=25 c curves must be derated unearly with increase in temperature single s/b limitation * t hermal l im it ation s/b limit ation dc 1ms * 50 100 150 10 20 30 40 0 0 0.01 0.03 0.1 0.3 0.01 10 20 30 40 50 0.2 0.4 0.6 0.8 1.0 i =8ma b i =7ma b i =6ma b i =5ma b i =4ma b i =3ma b i =2ma b i =1ma b 1310 0.03 0.05 0.1 0.3 0.5 1 3 5 10 v be(sat) ce(sat) v i =10i c b
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